IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle No. 1, Either Side (1)
t RC
ADDRESS
t OH
t AA
t OH
DATA OUT
BUSY OUT
PREVIOUS DATA VALID
t BDDH (2,3)
DATA VALID
2689 drw 08
NOTES:
1. R/ W = V IH , CE = V IL , and is OE = V IL . Address is valid prior to the coincidental with CE transition LOW.
2. t BDD delay is required only in the case where the opposite port is completing a write operation to the same the address location. For simultaneous read operations,
BUSY has no relationship to valid output data.
3. Start of valid data depends on which timing becomes effective last t AOE , t ACE , t AA , and t BDD .
Timing Waveform of Read Cycle No. 2, Either Side (3)
t ACE
CE
OE
DATA OUT
t AOE (4)
t LZ (1)
t HZ (2)
VALID DATA
t HZ (2)
I CC
CURRENT
t PU
t LZ
50%
(1)
t PD (4)
50%
I SS
2689 drw 09
NOTES:
1. Timing depends on which signal is asserted last, OE or CE .
2. Timing depends on which signal is deaserted first, OE or CE .
3. R/ W = V IH and OE = V IL , and the address is valid prior to or coincidental with CE transition LOW.
4. Start of valid data depends on which timing becomes effective last t AOE , t ACE , t AA , and t BDD .
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相关代理商/技术参数
IDT7140LA55CB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 8KBIT 55NS SB48
IDT7140LA55J 功能描述:IC SRAM 8KBIT 55NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT7140LA55J8 功能描述:IC SRAM 8KBIT 55NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT7140LA55L48B 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 8KBIT 55NS 48LCC
IDT7140LA55P 功能描述:IC SRAM 8KBIT 55NS 48DIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT7140LA55PF 功能描述:IC SRAM 8KBIT 55NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT7140LA55PF8 功能描述:IC SRAM 8KBIT 55NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT7140SA100C 功能描述:IC SRAM 8KBIT 100NS 48DIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8